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| STS8DNH3LL Dual n-channel 30 V - 0.018 - 8 A - SO-8 low gate charge STripFETTM III Power MOSFET Features Type STS8DNH3LL VDSS 30 V RDS(on) max < 0.022 ID 8A Optimal RDS(on) x Qg trade-off @ 4.5 V Conduction losses reduced Switching losses reduced S0-8 Application Switching applications Description This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology which is suitable for the most demanding DC-DC converter applications where high efficiency is required. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 8DH3LL Package SO-8 Packaging Tape & reel STS8DNH3LL June 2008 Rev 2 1/12 www.st.com 12 Contents STS8DNH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS8DNH3LL Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (vGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Single pulse avalanche energy Value 30 16 8 5 32 2 100 Unit V V A A A W mJ PTOT EAS(2) 1. Pulse width limited by safe operating area 2. Starting TJ = 25 C, ID = 6 A Table 3. Symbol Rthj-a (1) TJ Tstg Thermal data Parameter Thermal resistance junction-ambient max Thermal operating junction-ambient Storage temperature Value 62.5 150 -55 to 150 Unit C/W C C 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10s 3/12 Electrical characteristics STS8DNH3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS =Max rating @125C VGS = 16 V VDS = VGS,ID = 250 A VGS = 10 V, ID = 4 A VGS = 4.5 V, ID = 4 A 1 0.018 0.020 0.022 0.025 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 5. Symbol gfs Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25 V, f = 1 MHz, VGS = 0 Test conditions VDS = 15 V, ID = 4 A Min. Typ. 8.5 857 147 20 VDD = 15 V, ID = 8 A, VGS = 4.5 V (see Figure 14) 7 2.5 2.3 10 Max. Unit S pF pF pF nC nC nC 4/12 STS8DNH3LL Table 6. Symbol td(on) tr td(off) tf Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V (see Figure 16) VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V (see Figure 16) Min. Typ. 12 14.5 23 8 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Test conditions VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V VDD=15 V, ID= 4A , RG=4.7 VGS=4.5 V ISD = 8 A, VGS = 0 15 5.7 0.76 Min Typ. Max 8 32 1.5 Unit A A V ns nC A ISD = 8 A,VDD = 15 V Reverse recovery time di/dt = 100 A/s, Reverse recovery charge T = 150C Reverse recovery current j (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/12 Electrical characteristics STS8DNH3LL 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal resistance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature 6/12 STS8DNH3LL Figure 8. Gate charge vs gate-source voltage Figure 9. for Q1 Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature for Q1 Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuit STS8DNH3LL 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STS8DNH3LL Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS8DNH3LL SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS8DNH3LL Revision history 5 Revision history Table 8. Date 15-Jun-2004 16-Jun-2008 Document revision history Revision 1 2 First release Modified marking Changes 11/12 STS8DNH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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